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HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Typical Applications
The HMC572 is ideal for: * Point-to-Point and Point-to-Multi-Point Radio
Features
Conversion Gain: 8 dB Image Rejection: 20 dB 2 LO to RF Isolation: 40 dB Noise Figure: 3.5 dB Input IP3: +5 dBm
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* Military Radar, EW & ELINT * Satellite Communications
Die Size: 2.33 x 2.37 x 0.10 mm
Functional Diagram
General Description
The HMC572 is a compact GaAs MMIC I/Q downconverter chip which provides a small signal conversion gain of 8 dB with a noise figure of 3.5 dB and 20 dB of image rejection across the frequency band. The device utilizes an LNA followed by an image reject mixer which is driven by an active x2 multiplier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 hybrid is needed to select the required sideband. All data shown below is taken with the chip mounted in a 50 Ohm test fixture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. This product is a much smaller alternative to hybrid style image reject mixer downconverter assemblies.
Electrical Specifi cations, TA = +25 C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc*
Parameter Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Gain (As IRM) Noise Figure Image Rejection 1 dB Compression (Input) 2 LO to RF Isolation 2 LO to IF Isolation IP3 (Input) Amplitude Balance Phase Balance Total Supply Current *Data taken as IRM with external IF 90 hybrid 17 -7 40 28 +5 7 Min. Typ. 24.5 - 26.5 9 - 15.5 DC - 3.5 9 3.5 20 -5 43 32 +7 0.3 5 125 150 17 -8 38 27 +3 7 Max. Min. Typ. 24 - 28 9 - 15.5 DC - 3.5 9 3.5 23 -6 45 30 +5 0.7 7 125 150 Max. Units GHz GHz GHz dB dB dB dBm dB dB dBm dB Deg mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Data Taken As IRM With External IF 90 Hybrid Conversion Gain vs. Temperature
20 15 CONVERSION GAIN (dB) 10 5 0 -5 -10 23 24 25 26 27 28 29 RF FREQUENCY (GHz)
+25C +85C -55C
Image Rejection vs. Temperature
30
IMAGE REJECTION (dB)
25
20
3
+25C +85C -55C
15
10
5 23 24 25 26 27 28 29 RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
20 15 CONVERSION GAIN (dB) 10 5 0 -5 -10 23 24 25 26 27 28 29 RF FREQUENCY (GHz)
0 dBm +2dBm +4dBm +6dBm +8dBm
Return Loss
0
-5 RETURN LOSS (dB)
-10
-15
RF LO
-20
-25 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
Input P1dB vs. Temperature
0 -2 -4
Input IP3 vs. LO Drive
25 20 15
LO = 0 dBm LO = +2 dBm LO = +4 dBm LO = +6 dBm LO = +8 dBm
-6 P1dB (dBm) -8 -10 -12 -14 -16 -18 -20 23 24 25 26 27 28 29 RF FREQUENCY (GHz) -10 -15 23 24 25 26 27
+25C +85C -55C
IP3 (dBm)
10 5 0 -5
28
29
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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MIXERS - CHIP
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Quadrature Channel Data Taken Without IF 90 Hybrid Isolations
10 0
IF Bandwidth*
20 15 RF/IF2 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 0.5
CONVERSION GAIN RETURN LOSS
ISOLATION (dB)
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-10 RF/IF1 -20 -30 -40 -50 -60 23 24 25 26 27 28 29 RF FREQUENCY (GHz) 2LO/IF1 2LO/IF2 2LO/RF
1
1.5
2
2.5
3
3.5
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
4 3.5
Phase Balance vs. LO Drive
20
LO = 0 dBm LO = +2 dBm LO = +4 dBm LO = +6 dBm LO = +8 dBm
PHASE BALANCE (degrees)
AMPLITUDE BALANCE (dB)
3 2.5 2 1.5 1 0.5 0 -0.5 -1 23 24
LO = 0 dBm LO = +2 dBm LO = +4 dBm LO = +6 dBm LO = +8 dBm
15
10
5
0
-5 25 26 27 28 29 23 24 25 26 27 28 29 RF FREQUENCY (GHz) RF FREQUENCY (GHz)
Noise Figure vs. LO Drive, LO Frequency = 12 GHz
8
0dBm +2dBm +4dBm +6dBm +8dBm
Noise Figure vs. LO Drive, IF Frequency = 100 MHz
10
8 NOISE FIGURE (dB)
NOISE FIGURE (dB)
6
6
0dBm +2dBm +4dBm +6dBm +8dBm
4
4
2
2
0 0.5
0 1 1.5 2 2.5 3 3.5 4 21 22 23 24 25 26 27 28 29 IF FREQUENCY (GHz) RF FREQUENCY (GHz)
* Conversion gain data taken with external IF 90 hybrid, LO frequency fi xed at 12 GHz and RF varied
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Absolute Maximum Ratings
RF LO Drive Vdd Channel Temperature Continuous Pdiss (T=85C) (derate 10.2 mW/C above 85C) Thermal Resistance (RTH) (channel to package bottom) Storage Temperature Operating Temperature +2 dBm +13 dBm 5.5V 175C 920 mW 98.3 C/W -65 to +150 C -55 to +85 C
MxN Spurious Outputs
nLO mRF 0 1 2 3 4 0 xx 15 xx xx xx 1 46 39 xx xx xx 2 15 0 57 xx xx 3 32 35 66 xx xx 4 38 40 47 82 xx
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RF = 25 GHz @ -20 dBm LO = 12 GHz @ +4 dBm Data taken without IF hybrid All values in dBc below IF power level (1RF -2LO = 1 GHz)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
Standard GP-1
[1]
Alternate [2]
Outline Drawing
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS 0.004" 3. BOND PAD METALIZATION: GOLD 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. OVERALL DIE SIZE 0.002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Pad Descriptions
Pad Number 1 Function VddRF Description Power supply for RF LNA. External RF bypass capacitors are required. Power supply for second stage of LO amplifier. External RF bypass capacitors are required. Power supply for first stage of LO amplifier. External RF bypass capacitors are required. This pad is AC coupled and matched to 50 Ohms. This pad is DC coupled for applications not requiring operation to DC. This port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary frequency range. For operation to DC, this pad must not source / sink more than 3 mA of current or die non - function and possible die failure will result. This pad is AC coupled and matched to 50 Ohms. Interface Schematic
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2
VddLO2
3
VddLO
4
LO
5
IF1
6
IF2
7
RF
GND
The backside of the die must be connected to RF/DC ground.
Typical Application
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Assembly Drawing
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MIXERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
3 - 153
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
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RF Ground Plane
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC572
v01.1007
GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz
Notes:
3
MIXERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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